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AP502
Product Features
* 2110 - 2170 MHz * 30 dB Gain * +36 dBm P1dB * -55 dBc ACLR
@ 25 dBm wCDMA linear power
The Communications Edge TM Product Information
UMTS-band 4W HBT Amplifier Module
Product Description
The AP502 is a high dynamic range power amplifier in a RoHS-compliant flange-mount package. The multi-stage amplifier module has 30 dB gain, while being able to achieve high performance for PCS-band applications with +36 dBm of compressed 1dB power. The module has been internally optimized for driver applications provide -55 dBc ACLR at 25 for wCDMA applications. The module can be biased down for current when higher efficiency is required. The AP502 uses a high reliability InGaP/GaAs HBT process technology and does not require any external matching components. The module operates off a +12V supply and does not requiring any negative biasing voltages; an internal active bias allows the amplifier to maintain high linearity over temperature. It has the added feature of a +5V power down control pin. A low-cost metal housing allows the device to have a low thermal resistance to ensure long lifetimes. All devices are 100% RF and DC tested. The AP502 is targeted for use as a driver or final stage amplifier in wireless infrastructure where high linearity and high power is required. This combination makes the device an excellent candidate for next generation multi-carrier 3G base stations.
Functional Diagram
1
2
3
4
5
6
* +12 V Single Supply * Power Down Mode * Bias Current Adjustable * RoHS-compliant flange-mount pkg
Top View Pin No. 1 2/4 3/5 6 Case Function RF Output Vcc Vpd RF Input Ground
Applications
* Final stage amplifiers for repeaters * Optimized for driver amplifier PA mobile infrastructure
Specifications
25 C, Vcc=12V, Vpd=5V, Icq=820mA, R7=0, 50 unmatched fixture
Typical Performance (4)
Units Min
MHz MHz dB dBc dB dB dBm dBm mA mA V V VSWR
Parameter
Operational Bandwidth Test Frequency Power Gain wCDMA ACLR1 @ 25dBm (1) wCDMA ACLR2 @ 25dBm (2) Input Return Loss Output Return Loss Output P1dB Output IP3 Operating Current @ 25 dBm Quiescent Current, Icq Device Voltage, Vcc Device Voltage, Vpd (2) Load Stability
Typ Max
Parameter
Operating Current @ 25 dBm Quiescent Current, Icq Device Voltage, Vcc R7 value Test Frequency Power Gain wCDMA ACLR1 @ 25dBm (2) Input Return Loss Output Return Loss Output P1dB Output IP3
Units Config1 Config2
mA mA V MHz dB dBc dB dB dBm dBm 840 820 +12 0 2140 30 -55 11 5.3 +36 +52 420 250 +12 730 2140 27.7 -47.5 10 7 +36 +50
2110 - 2170 2140 28.5 30 34.5 -55 -50 -68 -53 11 5.3 +36 +52 790 840 940 780 820 920 +12 +5 10:1
4. Configuration 1 has the module biased in Class AB and is detailed on page 2 of the datasheet. Performance is shown at 25 C, Vcc=12V, Vpd=5V, Icq=820mA, R7=0, 50 unmatched fixture. Configuration 2 has the module biased in near Class B and is detailed on page 3 of the datasheet. Performance is shown at 25 C, Vcc=12V, Vpd=5V, Icq=250mA, R7=730, 50 tuned fixture.
1. 3GPP wCDMA signal modulation, Test model 1+32 DPCH, 3.84 MHz BW, 5 MHz offset. 2. 3GPP wCDMA signal modulation, Test model 1+32 DPCH, 3.84 MHz BW, 10 MHz offset. 3. Pull-down voltage: 0V = "OFF", 5V="ON"
Absolute Maximum Rating
Parameter
Operating Case Temperature Storage Temperature RF Input Power (continuous)
with output terminated in 50
-40 to +85 C -55 to +150 C +15 dBm
Rating
Ordering Information
Part No.
AP502 AP502-PCB
Description
UMTS-band 4W HBT Amplifier Module Fully-Assembled Evaluation Board
(Class AB configuration, Icq=820mA)
Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 1 of 5 February 2006
AP502
The Communications Edge TM Product Information
UMTS-band 4W HBT Amplifier Module
Performance Graphs - Class AB Configuration (AP502-PCB)
The AP502-PCB and AP502 module is configured for Class AB by default. The resistor - R7 - which sets the current draw for the amplifier is set at 0 in this configuration. Increasing that value will decrease the quiescent and operating current of the amplifier module, as described on the next page.
+12V GND +12V 10F DNP +5V
DNP
0
0
DNP
100pF
.01F
DNP RF IN 0 DNP DNP 6
.01F
DNP
100pF RF OUT 0 Notes: 1. Please note that for reliable operation, the evaluation board will have to be mounted to a much larger heat sink during operation and in laboratory environments to dissipate the power consumed by the device. The use of a convection fan is also recommended in laboratory environments. Details of the mounting holes used in the WJ heatsink are given on the last page of this datasheet. 2. The area around the module underneath the PCB should not contain any soldermask in order to maintain good RF grounding. 3. For proper and safe operation in the laboratory, the power-on sequencing should be followed: a. Connect RF In and Out b. Connect the voltages and ground pins as shown in the circuit. c. Apply the RF signal d. Power down with the reverse sequence
5
4
3
2
1
DNP
DNP
Narrowband S-Parameters
+25 C, Icq=850mA
Wideband S-Parameters
+25 C, Icq=850mA
Gain / Output Power vs. Input Power 38 36 P o u t (d B m ) 34 32 30 28 Pout Gain -6 -4 -2 0 2 4 6
2140 MHz, +25 C, Icq = 850mA
33 32 S 2 1 (d B ) 31 30 29
5
40 M a g n itu d e (d B ) 20 0 -20 -40 0
32.5 32 31.5 31 30.5 30 G a in (d B )
0 -5 -10 -15 S 1 1 , S 2 2 (d B )
S21 S11 S22
S21
28 2110 2130
S11
2150
S22
-20 2170
500
1000
1500
2000
2500
3000
Frequency (MHz)
Frequency (MHz)
Input Power (dBm) PAE / Icc vs. Output Power 60 50 40 IMD3L IMD3U IMD5 OIP3 30 20 1000 950 O IP 3 (d B m ) Ic c (m A ) 900 850 800 750 22 24 26 28 30 32 34 Output Power (dBm)
Specifications and information are subject to change without notice
2140 MHz, +25 C, Icq = 850mA
ACLR vs. Channel Power
3GPP W-CDMA, 1FA, Test Model 1+32 DPCH, 5 MHz offset 2140 MHz, Icq=850mA
IMD3, IMD5, OIP3 vs. Ouptut Power
2140 MHz, +25 C, Icq = 850mA
-40 -45 -50 -55 -60 18
-40 -50 IM D (d B c ) -60 -70 -80
-40 C +25 C +85 C
Icc
PAE
25 20 15 10 5 0 P A E (% )
A C L R (d B c )
20
22
24
26
28
20
22
24
26
28
30
32
Output Channel Power (dBm)
Output Power per tone (dBm)
WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com
Page 2 of 5 February 2006
AP502
The Communications Edge TM Product Information
UMTS-band 4W HBT Amplifier Module
Performance Graphs - Class B Configuration
The AP502 can be adjusted to operate at lower current biasing levels by modifying the R7 resistor for improved efficiency performance. The configuration shown on this page has the AP502 operating with Icq = 250 mA (Icc = 400 mA @ 27 dBm). Output L-C matching components have been added externally on the circuit to optimize the amplifier for ACPR performance at this biasing configuration.
+12V GND +12V 10F DNP +5V
DNP
0
730
DNP
100pF
.01F
DNP RF IN 0 DNP DNP 6
.01F
DNP
100pF RF OUT 2.2nH
5
4
3
2
1
DNP
DNP
Notes: 1. Please note that for reliable operation, the evaluation board will have to be mounted to a much larger heat sink during operation and in laboratory environments to dissipate the power consumed by the device. The use of a convection fan is also recommended in laboratory environments. Details of the mounting holes used in the WJ heatsink are given on the last page of this datasheet. 2. The area around the module underneath the PCB should not contain any soldermask in order to maintain good RF grounding. 3. For proper and safe operation in the laboratory, the power-on sequencing should be followed: a. Connect RF In and Out b. Connect the voltages and ground pins as shown in the circuit. c. Apply the RF signal d. Power down with the reverse sequence
Narrowband S-Parameters
+25 C, Icq=275mA
Wideband S-Parameters
+25 C, Icq=275mA
Gain / Output Power vs. Input Power 38 36 P o u t (d B m ) 34 32 30 28 Pout Gain -2 0 2 4 6 8 10
2140 MHz, +25 C, Icq=275mA
31 30 S 2 1 (d B ) 29 28 27 S21 26 2110 2130 S11 2150 S22
5
M a g n itu d e (d B )
40
30 29 28 27 26 25 G a in (d B ) P A E (% )
-5 -10 -15 -20 2170
S 1 1 , S 2 2 (d B )
0
20 0 -20 -40 0
S21 S11 S22
500
1000
1500
2000
2500
3000
Frequency (MHz) ACLR vs. Channel Power
+25 C, 3GPP W-CDMA, Test Model 1+32 DPCH, 1960 MHz, Icq=250mA
Frequency (MHz)
Input Power (dBm) PAE / Icc vs. Output Power 60 50 40 30 20 800 700 O IP 3 (d B m ) Ic c (m A ) 600 500 400 300 22 24 26 28 30 32 34 Output Power (dBm)
2140 MHz, +25 C, Icq=275mA
IMD3, IMD5, OIP3 vs. Ouptut Power
2140 MHz, +25 C, Icq=275mA
-40
-20 -30 IM D (d B c ) -40 -50 -60
A C L R (d B c )
-50
IMD3L IMD3U IMD5 OIP3
Icc
PAE
25 20 15 10 5 0
-60
5 MHz 10 MHz
-70 20 21 22 23 24 25 26 27 28 Output Channel Power (dBm)
20
22
24
26
28
30
32
Output Power per tone (dBm)
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 3 of 5 February 2006
AP502
The Communications Edge TM Product Information
UMTS-band 4W HBT Amplifier Module
MTTF Calculation
The MTTF of the AP502 can be calculated by first determining how much power is being dissipated by the amplifier module. Because the device's intended application is to be a power amplifier pre-driver or final stage output amplifier, the output RF power of the amplifier will help lower the overall power dissipation. In addition, the amplifier can be biased with different quiescent currents, so the calculation of the MTTF is custom to each application. The power dissipation of the device can be calculated with the following equation: Pdiss = Vcc * Icc - (Output RF Power - Input RF Power), Vcc = Operating supply voltage = 12V Icc = Operating current {The RF power is converted to Watts} While the maximum recommended case temperature on the datasheet is listed at 85 C, it is suggested that customers maintain an MTTF above 1 million hours. This would convert to a derating curve for maximum case temperature vs. power dissipation as shown in the plot below.
Maximum Recommended Case Temperature vs. Power Dissipation to maintain 1 million hours MTTF
90 Maximum Case Temperature (C)
To calculate the MTTF for the module, the junction temperature needs to be determined. This can be easily calculated with the module's power dissipation, the thermal resistance value, and the case temperature of operation: Tj = Pdiss * Rth + Tcase Tj = Junction temperature Pdiss = Power dissipation (calculated from above) Rth = Thermal resistance = 9 C/W Tcase = Case temperature of module's heat sink From a numerical standpoint, the MTTF can be calculated using the Arrhenius equation:
MTTF = A* e(Ea/k/Tj) A = Pre-exponential Factor = 6.087 x 10-11 hours Ea = Activation Energy = 1.39 eV k = Boltzmann's Constant = 8.617 x 10-5 eV/ K Tj = Junction Temperature (K) = Tj (C) + 273
A graphical view of the MTTF can be shown in the plot below.
MTTF vs. Junction Temperature 1.E+07
MTTF (hours)
80
1.E+06
70
60
50 4 5 6 7 8 9 10 11 12 Power Dissipation (Watts)
1.E+05 130
140
150
160
170
180
Junction Temperature (C)
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 4 of 5 February 2006
AP502
The Communications Edge TM Product Information
UMTS-band 4W HBT Amplifier Module
Outline Drawing
AP502
1 2 3 4 5 6
Outline Drawing for the Heatsink Shipped with the WJ Evaluation Board
Product Marking
The device will be marked with an "AP502" designator with an alphanumeric lot code on the top surface of the package noted as "ABCD" on the drawing. A manufacturing date will also be printed as "XXYY", where the "XX" represents the week number from 1 - 52. The product will be shipped in tubes in multiples of 15.
ESD / MSL Information
ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard:
Class 1C Passes at 1,000 to < 2,000 volts Human Body Model (HBM) JEDEC Standard JESD22-A114 Class III Passes 500 to < 1,000 volts Charged Device Model (CDM) JEDEC Standard JESD22-C101
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 5 of 5 February 2006

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